The Stabilizing Effects of PMMA Passivation on Solution-Processed Indium-Zinc Oxide Thin-Film Transistors

被引：0

作者：

Heo, Kwan-Jun ^{[1
]}

Eom, Ju-Song ^{[1
]}

Jo, Hyeonah ^{[2
]}

Choi, Seong Gon ^{[1
]}

Jung, Byung Jun ^{[2
]}

Kim, Sung-Jin ^{[1
]}

机构：

[1] Chungbuk Natl Univ, Coll Elect & Comp Engn, Cheongju 28644, South Korea

[2] Univ Seoul, Dept Mat Sci & Engn, Seoul 02504, South Korea

来源：

KOREAN JOURNAL OF METALS AND MATERIALS | 2016年 / 54卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

thin films; sol-gel; electrical properties; electrical; indium zinc oxide thin film transictors(TFTs); HIGH-PERFORMANCE;

D O I：

10.3365/KJMM.2016.54.4.270

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage current. Moreover, the potential to safely manipulate IZO-TFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter.

引用

页码：270 / 274

页数：5

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