Microscope Investigation and Electrical Conductivity of Si Doped n-type Al0.45Ga0.55N layer grown on AlGaN/AlN Superlattices

被引：0
|
作者：
Jeon, S. R. [1 ]
Son, S. J. [2 ]
Park, S. -H. [3 ]
机构：
[1] Korea Photon Technol Inst, Applicat Module Res Ctr, Kwangju 500779, South Korea
[2] LG Innotek, LED Prod Technol Div, Paju Si 413901, South Korea
[3] Yeungnam Univ, Dept Elect Engn, Gyongsan 712749, Gyeongsangbuk, South Korea
来源：
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII | 2014年 / 9003卷
关键词：
n-type AlGaN layer; high Al composition; AlGaN/AlN superlattices; THREADING-DISLOCATION-DENSITY; GAN; REDUCTION; FABRICATION; OVERGROWTH;
D O I：
10.1117/12.2041398
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the growth and characterization of a Si-doped, n-type AlGaN layer with 45% Al composition. For the application of n-type AlGaN layers with high Al composition in ultraviolet emitters, we fabricated an n-Al0.45Ga0.55N layer with high crystalline quality and high electrical conductivity by inserting Al0.85Ga0.15N/AlN superlattices (SLs) to prevent cracks prior to growing the n-type AlGaN layer. The dislocation density in the n-AlGaN layer with 45% Al composition and SLs was less than 2.4 x 10(10) cm(-2), which was lower than the dislocation density of 5.3 x 10(10) cm(-2) for the n-AlGaN layer without SLs. The resistivity, mobility, and free electron concentration in the n-type Al0.45Ga0.55N layer with SLs were 2.2 x 10(-2) Omega.cm, 55.0 cm(2)/V-s, and 5.0 x 10(18) cm(-3) at room temperature, respectively.
引用
收藏
页数：7
相关论文
共 50 条
  • [1] Growth and characterization of a high-quality Al0.45Ga0.55N layer with AlGaN/AlN superlattices
    Seong-Ran Jeon
    Si-Hyun Park
    Journal of the Korean Physical Society, 2013, 63 : 1625 - 1629
  • [2] Growth and characterization of a high-quality Al0.45Ga0.55N layer with AlGaN/AlN superlattices
    Jeon, Seong-Ran
    Park, Si-Hyun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 63 (08) : 1625 - 1629
  • [3] Effects of AlN/GaN Superlattices on the Structural Properties of Al0.45Ga0.55N Grown on AlN/Sapphire Templates
    Fu, Q. M.
    Peng, T.
    Pan, Y.
    Liu, C.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (06) : 2659 - 2661
  • [4] Ohmic contacts to p-type Al0.45Ga0.55N
    Hull, B.A., 1600, American Institute of Physics Inc. (96):
  • [5] Ohmic contacts to p-type Al0.45Ga0.55N
    Hull, BA
    Mohney, SE
    Chowdhury, U
    Dupuis, RD
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) : 7325 - 7331
  • [6] Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure
    Wang, Cuimei
    Wang, Xiaoliang
    Hu, Guoxin
    Wang, Junxi
    Li, Jianping
    Wang, Zhanguo
    APPLIED SURFACE SCIENCE, 2006, 253 (02) : 762 - 765
  • [7] Defect reduction in Si-doped Al0.45Ga0.55N films by SiNx interlayer method
    Li, Yang
    Chen, Shengchang
    Kong, Man
    Li, Senlin
    Tian, Wu
    Sun, Shichuang
    Wu, Zhihao
    Fang, Yanyan
    Dai, Jiangnan
    Chen, Changqing
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (04)
  • [8] Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al0.45Ga0.55N multiplication layer
    Mengjun Hou
    Zhixin Qin
    Chenguang He
    Lise Wei
    Fujun Xu
    Xinqiang Wang
    Bo Shen
    Electronic Materials Letters, 2015, 11 : 1053 - 1058
  • [9] Thermal annealing effect on the electrical properties of the Pt/Al0.45Ga0.55N Schottky contacts
    Cheng, Caijing
    Si, Junjie
    6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY, 2012, 8419
  • [10] Study on AlGaN P-I-N-I-N Solar-Blind Avalanche Photodiodes with Al0.45Ga0.55N Multiplication Layer
    Hou, Mengjun
    Qin, Zhixin
    He, Chenguang
    Wei, Lise
    Xu, Fujun
    Wang, Xinqiang
    Shen, Bo
    ELECTRONIC MATERIALS LETTERS, 2015, 11 (06) : 1053 - 1058
12345