High Magnetoresistance Ratio and Low Resistance-Area Product in Magnetic Tunnel Junctions with Perpendicularly Magnetized Electrodes

被引：75

作者：

Yakushiji, Kay ^{[1
]}

Noma, Kenji ^{[1
]}

Saruya, Takeshi ^{[1
]}

Kubota, Hitoshi ^{[1
]}

Fukushima, Akio ^{[1
]}

Nagahama, Taro ^{[1
]}

Yuasa, Shinji ^{[1
]}

Ando, Koji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 05期

关键词：

ROOM-TEMPERATURE; BARRIER;

D O I：

10.1143/APEX.3.053003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated perpendicularly magnetized MgO-based magnetic tunnel junctions (p-MgO-MTJs) with a [Co/Pt](n)/CoFeB/CoFe bottom electrode layer (free layer) and a CoFe/CoFeB/TbFeCo top electrode layer (reference layer). The insertion of thin CoFeB/CoFe layers at the barrier/electrode interfaces and post-annealing at a relatively low temperature of 225 degrees C simultaneously yielded high magnetoresistance (MR) ratios of up to 85% at room temperature and a low resistance-area (RA) product of 4.4 Omega mu m(2). Such a high MR ratio in low-RA p-MgO-MTJs is the key to developing ultrahigh-density spin-transfer-torque magnetoresistive random access memories (MRAMs). (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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