Enhanced performance of perovskite solar cells with solution-processed n-doping of the PCBM interlayer

被引:7
作者
Bae, Jun-Ho [1 ,2 ]
Noh, Yong-Jin [1 ,2 ]
Kang, Minji [3 ]
Kim, Dong-Yu [3 ]
Kim, Hyun-Bin [4 ]
Oh, Seung-Hwan [4 ]
Yun, Jin-Mun [4 ]
Na, Seok-In [1 ,2 ]
机构
[1] Chonbuk Natl Univ, Profess Grad Sch Flexible & Printable Elect, Deokjin Dong 664-14, Jeonju Si 561756, Jeollabuk Do, South Korea
[2] Chonbuk Natl Univ, Polymer Mat Fus Res Ctr, Deokjin Dong 664-14, Jeonju Si 561756, Jeollabuk Do, South Korea
[3] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 500712, South Korea
[4] Korea Atom Energy Res Inst, Radiat Res Div Ind & Environm, Geumgu Gil 29, Jeongeup 580185, Jeollabuk Do, South Korea
基金
新加坡国家研究基金会;
关键词
TRIHALIDE PEROVSKITE; EXTRACTION LAYERS; FILL-FACTOR; EFFICIENCY; ELECTRON; DEPOSITION; LENGTHS; DOPANT;
D O I
10.1039/c6ra13082h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Here, we report a facile and efficient sequential n-doping method to increase the device performance of planar-type organic/inorganic perovskite solar cells. Compared to the pristine PCBM-based electron transport layer (ETL), power conversion efficiencies of cells with a doped ETL are dramatically enhanced up to 12.53%.
引用
收藏
页码:64962 / 64966
页数:5
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