Change in the Thermodynamic Properties of a Si-Ge Solid Solution at a Decrease of the Nanocrystal Size

被引：7
|
作者：
Magomedov, M. N. [1 ]
机构：
[1] Russian Acad Sci, Dagestan Sci Ctr, Inst Geothermal Res, Makhachkala 367030, Russia
来源：
PHYSICS OF THE SOLID STATE | 2019年 / 61卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
nanocrystal; isochore; isobar; silicon; germanium; THERMAL-PROPERTIES; ELASTIC PROPERTIES; SILICON; GERMANIUM; SURFACE; TEMPERATURE; MODULUS; EXPANSION; PRESSURE; DIAMOND;
D O I：
10.1134/S1063783419110210
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The equation of state and the thermodynamic properties of the substitutional solid solution Si0.5Ge0.5 are calculated in the framework of the " medium atom" model. The changes in the equation of state and the thermodynamic properties upon the transition from a macrocrystal to a nanocrystal of 222 atoms with the geometric Gibbs surface are calculated using the RP-model of nanocrystal. The calculations have been performed along isotherms T = 100, 300, and 1000 K in the pressure range -1< P < 7 GPa. The changes in the properties is studied at the isochoric and also isobaric (P = 0) decrease of the number of atoms in the nanocrystal. It is shown that, at the isobaric (P = 0) decrease in the size, the specific volume of the Si-0.5-Ge-0.5 nanocrystal increases the more significantly, the higher the nanocrystal temperature.
引用
收藏
页码：2145 / 2154
页数：10
相关论文
共 50 条
  • [31] On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
    Das, Sudipta
    Khiangte, Krista R.
    Fandan, Rajveer S.
    Rathore, Jaswant S.
    Pokharia, Ravindra S.
    Mahapatra, Suddhasatta
    Laha, Apurba
    CURRENT APPLIED PHYSICS, 2017, 17 (03) : 327 - 332
  • [32] Theoretical investigations on the structural, lattice dynamical and thermodynamic properties of XC (X = Si, Ge, Sn)
    Zhang, Xudong
    Quan, Shanyu
    Ying, Caihong
    Li, Zhijie
    SOLID STATE COMMUNICATIONS, 2011, 151 (21) : 1545 - 1549
  • [33] Concentration Dependent Physical Properties of Ge1-xSnx Solid Solution
    Jivani, A. R.
    Jani, A. R.
    INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011), 2011, 1393
  • [34] Nano-Cones Formation on a Surface of Ge, Si Crystals and Si1-xGex Solid Solution by Laser Radiation
    Medvid', A.
    Onufrijevs, P.
    Lyutovich, K.
    Oehme, M.
    Kasper, E.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (10) : 9088 - 9094
  • [35] Theoretical investigations on the elastic and thermodynamic properties of Ti2AlC0.5N0.5 solid solution
    Du, Y. L.
    Sun, Z. M.
    Hashimoto, H.
    Barsoum, M. W.
    PHYSICS LETTERS A, 2009, 374 (01) : 78 - 82
  • [36] Field-effect-induced transport properties of Zn1-xMgxO nanocrystal solid solution
    Kim, Youngjun
    Yang, Heesun
    Park, Byoungnam
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (27)
  • [37] Theoretical research on structural, electronic, mechanical, lattice dynamical and thermodynamic properties of layered ternary nitrides Ti2AN (A = Si, Ge and Sn)
    Candan, A.
    Akbudak, S.
    Ugur, S.
    Ugur, G.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 771 : 664 - 673
  • [38] Piezoelectric, elastic, structural and dielectric properties of the Si1-xGexO2 solid solution: a theoretical study
    El-Kelany, Kh E.
    Erba, A.
    Carbonniere, P.
    Rerat, M.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 26 (20)
  • [39] Growth and properties of single crystals of Si1-x Ge x (0 &lt; x &lt; 0.35) solid solutions
    Atabaev, I. G.
    Matchanov, N. A.
    Khazhiev, M. U.
    Yusupova, Sh. A.
    TECHNICAL PHYSICS LETTERS, 2010, 36 (02) : 115 - 118
  • [40] 3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt
    Lorenzzi, J.
    Lazar, M.
    Tournier, D.
    Jegenyes, N.
    Carole, D.
    Cauwet, F.
    Ferro, G.
    CRYSTAL GROWTH & DESIGN, 2011, 11 (06) : 2177 - 2182
12345