Fabrication of RF-MEMS switches on LTCC substrates using PECVD a-Si as sacrificial layer

被引：5
|
作者：
Cianci, E.
Coppa, A.
Foglietti, V.
Dispenza, M.
Buttiglione, R.
Fiorello, A. M.
Marcelli, R.
Catoni, S.
Pochesci, D.
机构：
[1] CNR, IFN, Inst Photon & Nanotechnol, I-00156 Rome, Italy
[2] SELEX Sistemi Integrati SpA, Engn Unit, Microelect & Photon Dept, I-00131 Rome, Italy
[3] CNR, Inst Microelect & Microsyst, I-00156 Rome, Italy
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期
关键词：
contact switch; amorphous silicon; dry release; low actuation voltage;
D O I：
10.1016/j.mee.2007.01.096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF micromechanical switches are fabricated using dry releasing techniques. LTCC is used as substrate. Amorphous silicon, as an alternative sacrificial layer to silicon dioxide, has been used followed by dry plasma release. The silicon deposition has been optimized to obtain low mechanical stress and allowing thick sacrificial layer deposition. The use of amorphous silicon extends the flexibility of the design of the devices and of the packaging procedure. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1401 / 1404
页数：4
相关论文
共 50 条
  • [31] Packaging for RF MEMS devices using LTCC substrate and BCB adhesive layer
    Kim, KI
    Kim, JM
    Kim, JM
    Hwang, GC
    Baek, CW
    Kim, YK
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2006, 16 (01) : 150 - 156
  • [32] Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique
    Liu, Yuhao
    Bey, Yusha
    Liu, Xiaoguang
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (10) : 3151 - 3162
  • [33] Investigation on Dielectric Material Selection for RF-MEMS Shunt Capacitive Switches Using Ashby, TOPSIS and VIKOR
    Patra, Pritam
    Angira, Mahesh
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2020, 21 (02) : 157 - 164
  • [34] Single crystal silicon cantilever-based RF-MEMS switches using surface processing on SOI
    Nakatani, T
    Nguyen, AT
    Shimanouchi, T
    Imai, M
    Ueda, S
    Sawaki, I
    Satoh, Y
    MEMS 2005 MIAMI: TECHNICAL DIGEST, 2005, : 187 - 190
  • [35] A GSM/EDGE/WCDMA Adaptive Series-LC Matching Network Using RF-MEMS Switches
    van Bezooijen, Andre
    de Jongh, Maurice A.
    Chanlo, Christophe
    Ruijs, Lennart C. H.
    van Straten, Freek
    Mahmoudi, Reza
    van Roermund, Arthur H. M.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (10) : 2259 - 2268
  • [36] Investigation on Dielectric Material Selection for RF-MEMS Shunt Capacitive Switches Using Ashby, TOPSIS and VIKOR
    Pritam Patra
    Mahesh Angira
    Transactions on Electrical and Electronic Materials, 2020, 21 : 157 - 164
  • [37] Investigation on Switching Structure Material Selection for RF-MEMS Shunt Capacitive Switches Using Ashby, TOPSIS and VIKOR
    Deepankar Deshmukh
    Mahesh Angira
    Transactions on Electrical and Electronic Materials, 2019, 20 : 181 - 188
  • [38] Improved diphasic nc-si/a-si:H I-layer materials using PECVD
    Hao, HY
    Zhang, SB
    Xu, YY
    Zeng, XB
    Diao, HW
    Kong, GL
    Liao, XB
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 2025 - 2028
  • [39] Reconfigurable Multi-slot Multi-port Antennas using RF-MEMS Switches for Handheld Devices
    Chiu, Chi-Yuk
    Murch, Ross D.
    2010 ASIA-PACIFIC MICROWAVE CONFERENCE, 2010, : 999 - 1002
  • [40] Investigation on Switching Structure Material Selection for RF-MEMS Shunt Capacitive Switches Using Ashby, TOPSIS and VIKOR
    Deshmukh, Deepankar
    Angira, Mahesh
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2019, 20 (03) : 181 - 188
12345