Fabrication of RF-MEMS switches on LTCC substrates using PECVD a-Si as sacrificial layer

被引：5
|
作者：
Cianci, E.
Coppa, A.
Foglietti, V.
Dispenza, M.
Buttiglione, R.
Fiorello, A. M.
Marcelli, R.
Catoni, S.
Pochesci, D.
机构：
[1] CNR, IFN, Inst Photon & Nanotechnol, I-00156 Rome, Italy
[2] SELEX Sistemi Integrati SpA, Engn Unit, Microelect & Photon Dept, I-00131 Rome, Italy
[3] CNR, Inst Microelect & Microsyst, I-00156 Rome, Italy
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期
关键词：
contact switch; amorphous silicon; dry release; low actuation voltage;
D O I：
10.1016/j.mee.2007.01.096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF micromechanical switches are fabricated using dry releasing techniques. LTCC is used as substrate. Amorphous silicon, as an alternative sacrificial layer to silicon dioxide, has been used followed by dry plasma release. The silicon deposition has been optimized to obtain low mechanical stress and allowing thick sacrificial layer deposition. The use of amorphous silicon extends the flexibility of the design of the devices and of the packaging procedure. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1401 / 1404
页数：4
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