Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

被引：34
|
作者：
Han, Dong-Pyo [1 ]
Kim, Hyunsung [1 ]
Shim, Jong-In [1 ]
Shin, Dong-Soo [2 ,3 ]
Kim, Kyu-Sang [4 ]
机构：
[1] Hanyang Univ, Dept Elect & Commun Engn, Ansan 426791, Gyeonggi Do, South Korea
[2] Hanyang Univ, Dept Appl Phys, Ansan 426791, Gyeonggi Do, South Korea
[3] Hanyang Univ, Dept Bionanotechnol, Ansan 426791, Gyeonggi Do, South Korea
[4] Sangji Univ, Dept Appl Phys & Elect, Wonju 220702, Gangwon Do, South Korea
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 19期
关键词：
Current voltage characteristics - Efficiency - Light emitting diodes - Electroluminescence - Electric resistance - Gallium nitride - Light;
D O I：
10.1063/1.4902023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN-based blue light-emitting-diode (LED) by comparing the temperature-dependent characteristics of the electroluminescence (EL) efficiency, the EL spectra, and the current-voltage relation over a wide range of temperature (50-300 K). Based on these experimental results, we demonstrate that the simple ohmic potential drop in the Shockley diode equation is not sufficient to explain the experimental data when the severe carrier overflow to the p-(Al)GaN layer induces the efficiency droop in the LED device. The anomalous relation between current and voltage at cryogenic temperatures is explained by the space-charge-limited current formed by the overflown electrons, rather than by the increase of a constant series resistance in the p-(Al) GaN layer. (C) 2014 AIP Publishing LLC.
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页数：4
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