Diffusion mechanism study of arsenic in SiO2 using oxygen isotope 18O as a component element of matrix SiO2

被引：1

作者：

Tsunashima, Y ^{[1
]}

Aoki, N ^{[1
]}

机构：

[1] Toshiba Co Ltd, Microelect Engn Lab, Isogo Ku, Yokohama, Kanagawa 235, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The diffusion mechanism of arsenic (As) in SiO2 was studied by the diffusion of oxygen in SiO2 using isotope O-18 as a component element of the matrix oxide. The result suggests that As loosens SiO2 network bonds and drives a subsequent rearrangement of the network which enhances diffusion of As and oxygen in N-2 annealing. However 10% H-2 was added in N-2, As atoms were released from the network as a molecular form and were completely independent from the network rearrangement.

引用

页码：699 / 702

页数：4

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