Inverse brittle-to-ductile transition in gallium-arsenide under hydrostatic pressure

The specimens of 1.2×1.2×3 mm3 size were cut from a single crystal of intrinsic GaAs grown by the Czochralski method. The surfaces were polished with alumina paste. Uniaxial compression along the 〈1̄23〉 axis was made in a high pressure apparatus. A pressure of maximally 1.2 GPa was applied to specimen through the confining material, indium, for the tests up to 430 K. The stress-strain curves observed at various temperatures and confining pressures are presented. Above 600 K GaAs can be deformed under atmospheric pressure at least to 15% strain.