Bondability of Mg2Si element to Ni electrode using Al for thermoelectric modules

被引：11

作者：

Tohei, Tomotake ^{[1
]}

Fujiwara, Shinichi ^{[1
]}

Jinushi, Takahiro ^{[2
]}

Ishijima, Zenzo ^{[2
]}

机构：

[1] Yokohama Res Lab Hitachi Ltd, Totsuka Ku, 292 Yoshida Cho, Yokohama, Kanagawa 2440817, Japan

[2] Hitachi Chem Co Ltd, Hitachi Powdered Met, Chiba 2702295, Japan

来源：

INTERNATIONAL SYMPOSIUM ON INTERFACIAL JOINING AND SURFACE TECHNOLOGY (IJST2013) | 2014年 / 61卷

关键词：

PERFORMANCE;

D O I：

10.1088/1757-899X/61/1/012035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The purpose of this study has been to develop a low cost bonding technique for thermoelectric Mg2Si/Si-Ge modules that provides reliable bonding. Aluminum was chosen as an alternative material to conventional silver alloy braze because of its cost advantage and bondability. The shear strength of an aluminum joint between a Mg2Si element and nickel electrode was 19 MPa. The generation capacity of a prototype Mg2Si/Si-Ge twin couple module was about 20% higher than that of a conventional Si-Ge/Si-Ge twin couple module at 923 K (Delta T = 620 K).

引用

页数：7

共 17 条

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