A low supply voltage SiGe LNA for ultra-wideband frontends

被引：73

作者：

Barras, D ^{[1
]}

Ellinger, F

Jäckel, H

Hirt, W

机构：

[1] ETH, Elect Lab, CH-8092 Zurich, Switzerland

[2] IBM Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2004年 / 14卷 / 10期

关键词：

bipolar CMOS (BiCNIOS); low-noise amplifier (LNA); microwave monolithic integrated circuit (MMIC); SiGe; ultra-wideband (UWB);

D O I：

10.1109/LMWC.2004.834556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-power low-noise amplifier (LNA) for ultrawideband (UWB) radio systems is presented. The microwave monolithic integrated circuit (MMIC) has been fabricated using a commercial 0.25-mum silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technology. The amplifier uses peaking and feedback techniques to optimize its gain, bandwidth and impedance matching. It operates from 3.4 to 6.9 GHz, which corresponds with the low end of the available UWB radio spectrum. The LNA has a peak gain of 10 dB; and a noise figure less than 5 dB; over the entire bandwidth. The circuit consumes only 3.5 mW using a IN supply voltage. A figure of merit (FoM) for LNAs considering bandwidth, gain, noise, power consumption, and technology is proposed. The realized LNA circuit is compared with other recently published low-power LNA designs and shows the highest reported FoM.

引用

页码：469 / 471

页数：3

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