High-frequency compact analytical noise model of gate-all-around MOSFETs

被引:1
|
作者
Lazaro, A. [1 ]
Nae, B. [1 ]
Muthupandian, C. [1 ]
Iniguez, B. [1 ]
机构
[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain
关键词
DEEP-SUBMICRON MOSFETS; THERMAL NOISE; SOI MOSFETS; CMOS; RF; PERFORMANCE; DESIGN; CHARGE;
D O I
10.1088/0268-1242/25/3/035015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon-on-insulator (SOI) MOSFETs are excellent candidates for replacing the current conventional bulk technologies. The most promising SOI devices are based on multiple gate structures, among these the surrounding gate (SGT) MOSFET being one of the best candidates for the downscaling of complementary CMOS technology toward the sub-50 nanometer channel length range. In these devices, the transition frequency f(t) is greatly increased, making them suitable for high-frequency applications. This makes the RF and microwave modeling, as well as high-frequency noise studies of these devices, a matter of utmost importance. In this paper, we present compact expressions to model the drain and gate current noise spectrum densities and their correlation for SGT MOSFETs. Using this model, the SGT MOSFET noise performances are studied. The current and noise models, due to their explicit analytical expressions, can be easily introduced in circuit simulators.
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页数:10
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