Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

被引：2
|
作者：
Liu, Yang [1 ]
Yang, Yongchun [1 ,2 ]
机构：
[1] Lanzhou Univ, Sch Resource & Environm Sci, Lanzhou 730000, Peoples R China
[2] Key Lab West Chinas Enviromental Sci, Lanzhou 730000, Peoples R China
来源：
CHINESE PHYSICS B | 2016年 / 25卷 / 05期
基金：
中国国家自然科学基金;
关键词：
light emitting diodes; droop; Mg doping; SYSTEM; GROWTH;
D O I：
10.1088/1674-1056/25/5/058101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effects of Mg doping in the quantum barriers (QBs) on the efficiency droop of GaN based light emitting diodes (LEDs) were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells (QWs), both may reduce the efficiency droop. However, heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.
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页数：5
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