The anomalous negative acoustoelectric current in single-electron transport devices

被引：3

作者：

Song, L. ^{[1
]}

Chen, S. W. ^{[1
]}

He, J. H. ^{[1
]}

Zhang, C. Y. ^{[1
]}

Lu, C. ^{[2
]}

Gao, J. ^{[1
,2
]}

机构：

[1] Sichuan Univ, Dept Phys, Lab Mesoscop & Low Dimens Phys, Chengdu 610064, Peoples R China

[2] Natl Inst Measurement & Testing Technol, Chengdu 610021, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

Acoustoelectric effects; Quantum well devices; Surface acoustic wave; ACOUSTIC CHARGE-TRANSPORT; CHANNEL; DRIVEN; WAVES;

D O I：

10.1016/j.ssc.2009.11.001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the anomalous negative oscillations present in the frequency dependence of an acoustoelectric current by using surface acoustic wave devices. The time domain responses of the transmission performances for our devices show that the Bragg reflections from the second transducer have a strong effect. On the basis of the results measured, a new model is advanced for explaining the anomalous negative oscillations present in the I(f) characteristics. In addition in the negative direction, the acoustoelectric current measured as a function of the gate voltage is observed to be quantized. And the interpretation for the negative quantized plateaus present in the I(V-g) characteristics is also given. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：292 / 296

页数：5

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