Local Anodic Oxidation of Graphene Layers on SiC

被引:8
作者
Alekseev, P. A. [1 ]
Borodin, B. R. [1 ]
Dunaevskii, M. S. [1 ]
Smirnov, A. N. [2 ]
Davydov, V. Yu. [1 ]
Lebedev, S. P. [1 ]
Lebedev, A. A. [1 ]
机构
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia
关键词
FILMS;
D O I
10.1134/S1063785018050024
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method of local anodic oxidation has been used to obtain graphene-oxide regions on SiC. The change of the surface properties was confirmed by atomic-force microscopy and Raman spectroscopy. Experimental data were obtained on the conductivity, potential, and topography of the oxidized regions. It was shown that the oxidation leads to a rise in the surface potential. A relationship was found between oxidation parameters, such as the scanning velocity and the probe voltage. The method of local anodic oxidation was used to obtain by lithography an similar to 20-nm-wide nanoribbon and an similar to 10-nm-wide nanoconstriction.
引用
收藏
页码:381 / 383
页数:3
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