Effect of proton-irradiation on photoluminescence emission from self-assembled InAs/GaAs quantum dots

被引：5
|
作者：
Cheng, C. Y.
Niu, H.
Chen, C. H.
Yang, T. N.
Wang, H. Y.
Lee, C. P.
机构：
[1] Natl Tsing Hua Univ, Nucl Sci & Technol Dev Ctr, Hsinchu 30013, Taiwan
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
[3] Inst Nucl Energy Res, Div Phys, Tao Yuan 32546, Taiwan
[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 261卷 / 1-2期
关键词：
quantum dots; GaAs; InAs; ion implantation; hydrogen passivation;
D O I：
10.1016/j.nimb.2007.04.279
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A study of the effects of proton-irradiation of InAs/GaAs quantum dots (QDs) is presented. The samples are simple GaAs-capped, single layer of InAs quantum dots, grown on GaAs substrates by molecular beam epitaxy. Using proton implantation (10 keV to I MeV protons, dose of up to I X 10(13)/cm(2)) and photoluminescence (PL) spectroscopy at 25 K, we discuss the influence of proton-irradiation upon the photoluminescence degradation or enhancement of quantum dots. In general, we find the PL efficiency enhancement occurs when the dose is about the same order of magnitude as the average QD density and it occurs when the average separation between proton passage is about twice the QD size. The QDs must be annealed of radiation-damage of a size in 15 nm range to maximize PL efficiency. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1171 / 1175
页数：5
相关论文
共 50 条
  • [1] Effect of proton implantation on photoluminescence of self-assembled InAs/GaAs quantum dots
    Tang, NY
    Ji, YL
    Chen, XS
    Wei, L
    ACTA PHYSICA SINICA, 2005, 54 (06) : 2904 - 2909
  • [2] Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots
    Kiravittaya, S
    Nakamura, Y
    Schmidt, OG
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) : 224 - 228
  • [3] Photoluminescence of self-assembled InAs/GaAs quantum dots excited by ultraintensive femtosecond laser
    Huang, Shihua
    Ling, Yan
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
  • [4] Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots
    Maes, J
    Hayne, M
    Henini, M
    Pulizzi, F
    Patanè, A
    Eaves, L
    Moshchalkov, VV
    PHYSICA B-CONDENSED MATTER, 2004, 346 : 428 - 431
  • [5] 1.3 μm room temperature emission from InAs/GaAs self-assembled quantum dots
    Murray, R
    Childs, D
    Malik, S
    Siverns, P
    Roberts, C
    Hartmann, JM
    Stavrinou, P
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B): : 528 - 530
  • [6] Extremely low density self-assembled InAs/GaAs quantum dots
    李林
    刘国军
    李占国
    李梅
    王晓华
    Chinese Optics Letters, 2008, (06) : 443 - 445
  • [7] Fabrication of self-assembled InGaAs, GaAs, and InAs quantum dots by chemical beam epitaxy
    Ro, JR
    Kim, SB
    Lee, EH
    Park, SJ
    MICROELECTRONIC ENGINEERING, 1998, 43-4 : 11 - 18
  • [8] Photoluminescence of self-assembled InAs/AlAs quantum dots as a function of density
    Ma, Z
    Pierz, K
    Keyser, UF
    Haug, RJ
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4) : 117 - 119
  • [9] 1/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots
    Song, JD
    Choi, WJ
    Han, IK
    Cho, WJ
    Lee, JI
    Yu, YB
    Pyun, CH
    Kim, JH
    Song, JI
    Chovet, A
    NOISE AND INFORMATION IN NANOELECTRONICS, SENSORS, AND STANDARDS II, 2004, 5472 : 432 - 439
  • [10] Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots
    Sheng, Weidong
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06) : 1894 - 1895
12345