Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning

被引：3

作者：

Cho, Hyun Kyong ^{[1
]}

Kuelberg, Alex ^{[1
]}

Ploch, Neysha Lobo ^{[1
]}

Rass, Jens ^{[1
]}

Ruschel, Jan ^{[1
]}

Kolbe, Tim ^{[1
]}

Knauer, Ma ^{[1
]}

Braun, Andrea ^{[1
]}

Krueger, Olaf ^{[1
]}

Einfeldt, Sven ^{[1
]}

Weyers, Markus ^{[1
]}

Kneissl, Michael ^{[1
,2
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2018年 / 30卷 / 20期

关键词：

Deep UV; light emitting diodes (LEDs); AlGaN; wafer bow; laser patterning; LED performance; SAPPHIRE;

D O I：

10.1109/LPT.2018.2869218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the effect of bow reduction of AlInGaN-based deep-ultraviolet light-emitting diode (DUV LED) wafers using internally focused laser patterning. The laser-induced stress inside of the sapphire substrate was found to increase with increasing density of laser lines and decreasing distance of the laser lines to the back surface of the sapphire substrate. By adjusting the laser process, the convex bow of DUV LED wafers could be almost completely eliminated. This bow reduction resulted in an improved uniformity of the LED forward voltage across the wafer compared to the reference wafer without laser patterning.

引用

页码：1792 / 1794

页数：3