Deep UV Sensors Enabling Solar-Blind Flame Detectors for Large-Area Applications

被引:29
作者
Avila-Avendano, Carlos [1 ]
Pintor-Monroy, Maria I. [1 ]
Ortiz-Conde, Adelmo [2 ]
Caraveo-Frescas, Jesus A. [1 ]
Quevedo-Lopez, Manuel A. [1 ]
机构
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[2] Univ Simon Bolivar, Solid State Elect Lab, Caracas 1080, Venezuela
关键词
Flame detector; gallium oxide; poly-Si thin-film transistors; UV detectors; ULTRAVIOLET; TEMPERATURE; PERFORMANCE; LIGHT; BETA-GA2O3; DECONTAMINATION;
D O I
10.1109/JSEN.2021.3071980
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Large-area compatible, solar-blind deep-ultraviolet sensors based on active pixels are demonstrated with CMOS amplifiers based on poly-Si thin-film transistors and Ga2 O3 thin-film photoresistors. The active pixel configuration sensor enables approximately 40X higher responsivity compared to a discrete sensor, and the CMOS inverter amplifier exhibits a gain of 210 VN. The Ga-2 O-3-based sensors were integrated on the same substrate depositing the films using magnetron sputtering at room temperature, ensuring its compatibility with large-area applications. The responsivity of discrete Ga-2 O-3 sensors was evaluated at different wavelengths in the deep-ultraviolet and visible ranges, and showed a maximum responsivity of 51 MW for a wavelength of 232 nm, with a deep-ultraviolet to visible light rejection ratio of approximately 10(2). The active pixel sensor was implemented as flame detector resulting in an output voltage signal of up to 2 V when the system was exposed to a flame under regular background illumination conditions.
引用
收藏
页码:14815 / 14821
页数:7
相关论文
共 42 条
[1]   Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD [J].
Alema, Fikadu ;
Hertog, Brian ;
Osinsky, Andrei ;
Mukhopadhyay, Partha ;
Toporkov, Mykyta ;
Schoenfeld, Winston V. .
JOURNAL OF CRYSTAL GROWTH, 2017, 475 :77-82
[2]  
Arai T., 2011, PROC SID DIGEST, P710, DOI DOI 10.1889/1.3621424
[3]   Integrated Thin-Film Radiation Detectors and In-Pixel Amplification [J].
Avila-Avendano, Carlos ;
Mejia, Israel ;
Garcia-Lozano, Rodolfo ;
Reyes, Luis E. ;
Rozhdestvenskyy, Sergiy ;
Pham, Christopher ;
Pradhan, Bhabendra ;
Gnade, Bruce E. ;
Quevedo-Lopez, Manuel A. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (09) :3809-3815
[4]   Sterilization of sea lice eggs with ultraviolet C light: towards a new preventative technique for aquaculture [J].
Barrett, Luke T. ;
Pert, Cassandra G. ;
Bui, Samantha ;
Oppedal, Frode ;
Dempster, Tim .
PEST MANAGEMENT SCIENCE, 2020, 76 (03) :901-906
[5]  
Bintsis T, 2000, J SCI FOOD AGR, V80, P637, DOI 10.1002/(SICI)1097-0010(20000501)80:6<637::AID-JSFA603>3.0.CO
[6]  
2-1
[7]   CHARACTERIZATION OF LOW-TEMPERATURE POLY-SI THIN-FILM TRANSISTORS [J].
BROTHERTON, SD ;
AYRES, JR ;
YOUNG, ND .
SOLID-STATE ELECTRONICS, 1991, 34 (07) :671-679
[8]  
Bui S., FRA HAVFORSKINGEN
[9]   Amorphous silicon x-ray image sensor [J].
Chabbal, J ;
Chaussat, C ;
Ducourant, T ;
Fritsch, L ;
Michailos, J ;
Spinnler, V ;
Vieux, G ;
Arques, M ;
Hahm, G ;
Hoheisel, M ;
Horbaschek, H ;
Schulz, R ;
Spahn, M .
PHYSICS OF MEDICAL IMAGING: MEDICAL IMAGING 1996, 1996, 2708 :499-510
[10]   AlxGa1-xN-based deep-ultraviolet 320 x 256 focal plane array [J].
Cicek, Erdem ;
Vashaei, Zahra ;
Huang, Edward Kwei-wei ;
McClintock, Ryan ;
Razeghi, Manijeh .
OPTICS LETTERS, 2012, 37 (05) :896-898