A cross-sectional scanning tunneling microscopy study of IrO2 rutile single crystals

被引：12
|
作者：
Pai, Woei Wu [1 ]
Wu, T. Y.
Lin, C. H.
Wang, B. X.
Huang, Y. S.
Chou, H. L.
机构：
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[3] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan
来源：
SURFACE SCIENCE | 2007年 / 601卷 / 12期
关键词：
cross-sectional STM; XSTM; IrO2; STM; rutile; SURFACE; STM;
D O I：
10.1016/j.susc.2007.04.227
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Rutile iridium dioxide (IrO2) surfaces were studied by cross-sectional scanning tunneling microscopy (XSTM). Atomically flat surfaces prepared by in situ ultra high vacuum cleaving of crystalline platelets of thicknesses < 50 mu m were successfully demonstrated. In addition to (110) surface, several vicinal planes, e.g., (120), (130) and similar to (891), were also examined. The cleaved planes are close to bulk-terminated surfaces with predominant [001]-oriented bridge oxygen rows. Unlike TiO2, bright oxygen rows are imaged and oxygen defects appear as dim species. Our studies show that XSTM is a viable technique to study oxide surfaces that are otherwise difficult to prepare. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码：L69 / L72
页数：4
相关论文
共 45 条
  • [1] Challenges in cross-sectional scanning tunneling microscopy on semiconductors
    Garleff, J. K.
    Wijnheijmer, A. P.
    Koenraad, P. M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (06)
  • [2] Cross-sectional scanning tunneling microscopy of buried heterostructure lasers
    Cobley, R. J.
    Teng, K. S.
    Brown, M. R.
    Maffeis, T. G. G.
    Wilks, S. P.
    International Journal of Nanoscience, Vol 3, Nos 4 and 5, 2004, 3 (4-5): : 525 - 531
  • [3] Cross-Sectional Scanning Tunneling Microscopy for Complex Oxide Interfaces
    Chien, TeYu
    Guisinger, Nathan P.
    Freeland, John W.
    OXIDE-BASED MATERIALS AND DEVICES II, 2011, 7940
  • [4] Cross-Sectional Scanning Tunneling Microscopy Applied to Complex Oxide Interfaces
    Chien, Te Yu
    Chakhalian, Jak
    Freeland, John W.
    Guisinger, Nathan P.
    ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (20) : 2565 - 2575
  • [5] Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy
    Timm, R
    Grabowski, J
    Eisele, H
    Lenz, A
    Becker, SK
    Müller-Kirsch, L
    Pötschke, K
    Pohl, UW
    Bimberg, D
    Dähne, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 231 - 235
  • [6] Fundamental analysis for active phase of rutile-based IrO2 catalyst: Comparison study of CH4 oxidation on IrO2(100) and IrO2(110)
    Kim, Minkyu
    Kang, Sung Bong
    APPLIED SURFACE SCIENCE, 2022, 605
  • [7] Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs
    Kawasaki, Jason K.
    Timm, Rainer
    Buehl, Trevor E.
    Lundgren, Edvin
    Mikkelsen, Anders
    Gossard, Arthur C.
    Palmstrom, Chris J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (03):
  • [8] Cross-sectional scanning tunneling microscopy studies of novel III-V semiconductor structures
    Mikkelsen, A
    Lundgren, E
    PROGRESS IN SURFACE SCIENCE, 2005, 80 (1-2) : 1 - 25
  • [9] Scanning tunneling microscopy observation of sulfur electrodeposits on graphite single crystals
    Zubimendi, JL
    Salvarezza, RC
    Vazquez, L
    Arvia, AJ
    LANGMUIR, 1996, 12 (01) : 2 - 11
  • [10] Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy
    Offermans, P
    Koenraad, PM
    Wolter, JH
    Pierz, K
    Roy, M
    Maksym, PA
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 236 - 240
12345