Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator

被引：5

作者：

Ohara, Kosuke ^{[1
]}

Yamashita, Ichiro ^{[1
]}

Uraoka, Yukiharu ^{[2
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

FERRITIN;

D O I：

10.1143/JJAP.49.04DJ05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We proposed the fabrication of nanodot-type floating gate memory with biomineralized nanodots on silicon-on-insulator. High-density Co bionanodots (Co-BNDs) were adsorbed on SiO2. The current-voltage curve with a large hysteresis caused by electron injection into Co-BNDs and the emission of Co-BNDs were observed. A good retention characteristic due to charge confinement in the potential well of a Co-BND was observed. Good writing and erasing characteristics were observed. We confirmed that the memory has high reliability with good endurance. This proposed flash memory is promising for memory devices in system-on-panel displays owing to its fast writing/erasing speed and high reliability. (C) 2010 The Japan Society of Applied Physics

引用

页数：4

共 2 条

[1] Low-temperature polycrystalline silicon thin film transistor flash memory with ferritin
Ichikawa, Kazunori
Uraoka, Yukiharu
Punchaipetch, Prakaipetch
Yano, Hiroshi
Hatayama, Tomoaki
Fuyuki, Takashi
Yamashita, Ichiro
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (33-35): : L804 - L806
[2] Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization
Tojo, Yosuke
Miura, Atsushi
Ishikawa, Yasuaki
Yamashita, Ichiro
Uraoka, Yukiharu
THIN SOLID FILMS, 2013, 540 : 266 - 270

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