Annealing condition optimization and electrical characterization of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors

被引：26

作者：

Choi, Donghun ^{[1
]}

Harris, James S.

Warusawithana, Maitri

Schlom, Darrell G.

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

关键词：

D O I：

10.1063/1.2748308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors fabricated using molecular-beam deposition are investigated. The surface was protected during sample transfer between III-V and oxide molecular beam epitaxy chambers by a thick arsenic-capping layer. Amorphous LaAlO3 was deposited on c(4x4) and (2x4) reconstructed (100) GaAs surfaces. An annealing method, a low temperature-short time rapid thermal annealing (RTA) followed by a high temperature RTA, was developed, yielding extremely small hysteresis (similar to 30 mV), frequency dispersion (similar to 60 mV), and interfacial trap density (mid-10(10) eV(-1) cm(-2)). (c) 2007 American Institute of Physics.

引用

页数：3

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