Excimer laser irradiation of Si3N4 films deposited on Si

被引：2

作者：

Ohmukai, M ^{[1
]}

Takigawa, Y

Kurosawa, K

机构：

[1] Akashi Coll Technol, Dept Elect Engn, Akashi, Hyogo 674, Japan

[2] Osaka Electrocommun Univ, Dept Elect, Neyagawa, Osaka 572, Japan

[3] Miyazaki Univ, Dept Elect Engn, Miyazaki 88921, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 07期

关键词：

D O I：

10.1063/1.366571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effect of argon excimer laser irradiation of silicon nitride films deposited on silicon substrates. When the film thickness is equal to or greater than 40 nm, the irradiation induces amorphous silicon precipitation near the thin surface layer of the film, which has been clarified by means of x-ray photoelectron and Raman spectroscopy. The formation mechanism of amorphous silicon with the irradiation is discussed. The phase of silicon precipitation depends on the thermal properties of the substrate material. (C) 1998 American Institute nf Physics. [S0021-8979(98)04507-1].

引用

页码：3556 / 3559

页数：4

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