The effects of proton irradiation on the performance of mm-wave transmission lines implemented in SiGe technology

被引：3
|
作者：
Andrews, J [1 ]
Morton, M
Lee, JS
Papapolyrnerou, J
Cressler, JD
Sutton, AK
Haugerud, BM
Marshall, PW
Reed, RA
Cho, DY
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30308 USA
[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
[3] Samsung Elect Co Ltd, RF Technol Dev, Syst LSI Div, Gyeonggi, South Korea
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期
关键词：
SiGe; heterojunction bipolar transistor (HBT); mm-wave; transmission lines; thin film microstrip (TFMS); co-planar waveguide (CPW);
D O I：
10.1109/TNS.2004.839192
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper examines, for the first time, the effects of radiation on transmission lines implemented in a commercial SiGe heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) technology. Two different types of mm-wave transmission lines were designed, fabricated, and measured up to 110 GHz, and irradiated with 63.3 MeV protons to fluences as high as 5 x 10(13) p/cm(2). The results demonstrate that radiation-induced changes are minimal in such lines, making them potentially suitable for use in space-based SiGe monolithic mm-wave communications systems.
引用
收藏
页码：3807 / 3810
页数：4
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