A Low-Power RF-to-BB-Current-Reuse Receiver Employing Simultaneous Noise and Input Matching and 1/f Noise Reduction for IoT Applications

被引:21
作者
Kim, Sinyoung [1 ,2 ]
Kwon, Kuduck [1 ]
机构
[1] Kangwon Natl Univ, Dept Elect Engn, Chunchon 24341, South Korea
[2] Samsung Elect Co Ltd, Hwaseong 18448, South Korea
基金
新加坡国家研究基金会;
关键词
1/f noise; CMOS; current-reuse; enhanced machine type communication (eMTC); IEEE; 80211ah; input power matching; Internet of Things (IoT); low-noise transconductor; narrow band (NB)-IoT; noise matching; FRONT-END;
D O I
10.1109/LMWC.2019.2932841
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-power low-noise RF-to-baseband (BB)-current-reuse quadrature receiver employing simultaneous noise and input power matching and 1/f noise reduction technique is proposed for the Internet of Things applications. The receiver shares bias current between a low-noise transconductor and a transimpedance amplifier with single supply voltage and employs a double-balanced current-mode passive mixer with 25% duty-cycle local oscillator (LO), thereby reducing power consumption. To improve noise performance in the direct-conversion or low-IF receiver, the proposed receiver architecture performs simultaneous noise and input power matching at the RF domain and 1/f noise reduction at the BB domain. The presented prototype, implemented in the 65-nm CMOS process, occupies an active die area of 0.559 mm(2) while consuming 3.6 mW at a supply voltage of 1.8 V. It achieves a voltage gain of 40.7 dB, an noise figure (NF) of 1.94 dB, S-11 of less than -10 dB, and an IIP3 of -25.6 dBm.
引用
收藏
页码:614 / 616
页数:3
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