Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation

被引:18
作者
Chen, Chenghao [1 ]
Lai, Min [1 ]
Fang, Fengzhou [1 ]
机构
[1] Tianjin Univ, Lab Micro Nano Mfg Technol, State Key Lab Precis Measuring Technol & Instrume, Tianjin 300072, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2021年 / 16卷 / 01期
基金
中国国家自然科学基金;
关键词
Molecular dynamics; Gallium arsenide; Nano-cutting; Dislocation; Stacking fault; Phase transformation; GAAS; NANOINDENTATION; NANOSCRATCH; SI;
D O I
10.1186/s11671-021-03574-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
During the nano-cutting process, monocrystalline gallium arsenide is faced with various surface/subsurface deformations and damages that significantly influence the product's performance. In this paper, molecular dynamics simulations of nano-cutting on gallium arsenide are conducted to investigate the surface and subsurface deformation mechanism. Dislocations are found in the machined subsurface. Phase transformation and amorphization are studied by means of coordination numbers. Results reveal the existence of an intermediate phase with a coordination number of five during the cutting process. Models with different cutting speeds are established to investigate the effects on the dislocation. The effect of crystal anisotropy on the dislocation type and density is studied via models with different cutting orientations. In addition, the subsurface stress is also analyzed.
引用
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页数:10
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