Effects of Temperature on Microstructure and Tribological Performance of a-CNx Films Prepared by Pulsed Laser Deposition

被引:10
作者
Zheng, X. H. [1 ,2 ]
Tu, J. P. [1 ]
Song, R. G. [2 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ Technol, MOE Key Lab Mech Mfg & Automat, Hangzhou, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Carbon nitride film; Friction and wear; Microstructure; Pulsed laser deposition; CARBON NITRIDE FILMS; THIN-FILMS; PLASMA CVD; PARAMETERS;
D O I
10.1080/10426911003747980
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon nitride (a-CNx) films were deposited onto silicon wafers at temperatures from RT up to 600 degrees C by using pulsed laser deposition technique (PLD). The composition, morphology and microstructure of the CNx films were characterized by X-ray photoelectron spectrum (XPS), scanning electron microscopy (SEM) and Raman spectrum. The tribological performance of the films was investigated using a ball-on-disk tribometer. With increasing the deposition temperature ranging from RT to 400 degrees C, the N content of films dropped from 36 at% to 22 at%, the ratio of N-sp3 C bonds, hardness and friction coefficient of the film decreased. Further increase of deposition temperature led to the lack of nitrogen and the increasing degree of order in ringed sp2 C=C bonds of the amorphous carbon film. The mechanical and tribological performances became worse. The film deposited at 300 degrees C showed a low friction coefficient of 0.11 and a preferable wear resistance of 1.65x10-7mm3N-1m-1 in humid air.
引用
收藏
页码:311 / 315
页数:5
相关论文
共 18 条
[1]   Characterization of CNx films deposited by pulsed laser ablation using spectroscopic ellipsometry [J].
Boher, P ;
Fogarassy, E ;
Szörényi, T ;
Antoni, F .
SURFACE & COATINGS TECHNOLOGY, 2002, 151 :144-150
[2]   Preparation of nitrogen-rich CNx films with inductively coupled plasma CVD and pulsed laser deposition [J].
Bulir, J ;
Delplancke-Ogletree, MP ;
Lancok, J ;
Jelínek, M ;
Popov, C ;
Klett, A ;
Kulisch, W .
DIAMOND AND RELATED MATERIALS, 2001, 10 (9-10) :1901-1909
[3]   a-CN thin film properties as a function of laser ablation plasma parameters [J].
Escobar-Alarcon, L. ;
Arrieta, A. ;
Camps, E. ;
Romero, S. ;
Muhl, S. ;
Camacho-Lopez, M. A. .
DIAMOND AND RELATED MATERIALS, 2007, 16 (4-7) :1291-1294
[4]   Compositional and thickness distribution of carbon nitride films grown by PLD in the target plane [J].
Geretovszkya, Z ;
Szörényi, T .
THIN SOLID FILMS, 2004, 453 :172-176
[5]   Carbon nitride thin films and nanofibres synthesised by hot filament CVD [J].
Karimi, A ;
Kurt, R .
SURFACE ENGINEERING, 2001, 17 (02) :99-104
[6]   Tribological and mechanical behaviors of CrN/a-CNx superlattice thin films [J].
Kim, Youn J. ;
Byun, Tae J. ;
Han, Jeon G. .
SURFACE & COATINGS TECHNOLOGY, 2008, 203 (5-7) :790-793
[7]   Investigation of the thermal stability of nitrogen-rich amorphous carbon nitride films [J].
Kulisch, W ;
Popov, C ;
Zambov, L ;
Bulir, J ;
Delplancke-Ogletree, MP ;
Lancok, J ;
Jelínek, M .
THIN SOLID FILMS, 2000, 377 :148-155
[8]   Synthesis and optical characterization of amorphous carbon nitride thin films by hot filament assisted RF plasma CVD [J].
Kundoo, S ;
Chattopadhyay, KK ;
Banerjee, AN ;
Nandy, SK .
VACUUM, 2003, 69 (04) :495-500
[9]   Status of technology of carbon nitride films: challenges and opportunties [J].
Rodil, S. E. .
SURFACE ENGINEERING, 2006, 22 (05) :321-324
[10]   The effect of processing parameters on amorphous carbon nitride layer properties [J].
Rusop, M ;
Soga, T ;
Jimbo, T .
DIAMOND AND RELATED MATERIALS, 2004, 13 (11-12) :2187-2196