ON-State Gate Stress Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

被引：7

作者：

Stockman, Arno ^{[1
]}

Moens, Peter ^{[1
]}

机构：

[1] ON Semicond Belgium, CRD, Oudenaarde, Belgium

来源：

2020 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) | 2020年

关键词：

gallium nitride (GaN); enhancement mode (e-mode); high-electron-mobility transistor (HEMT); p-GaN gate; conduction mechanism; threshold voltage stability; technology computer-aided design (TCAD); SHIFT;

D O I：

10.1109/IIRW49815.2020.9312869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the transient threshold voltage behavior of p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) is evaluated, by monitoring the threshold voltage from 10 mu s up to 100 s during positive gate bias stress, as well as during recovery. It is found that the threshold voltage transients are highly dependent on the current distribution in the metal/p-GaN/AlGaN/GaN gate stack. Two different gate processes are evaluated in terms of os-state gate current, gate conduction mechanism and threshold voltage stability. Devices with perimeter-dependent gate current show large threshold voltage shifts; devices in which the gate current is due to uniform thermionic (field) emission over the Schottky interface into the bulk p-GaN demonstrate stable behavior for V-g < 5 V.

引用

页码：12 / 15

页数：4

共 14 条

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