Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

被引：3

作者：

Balestra, F. Serra di Santa ^{[1
]}

Contamin, L. ^{[2
]}

Casse, M. ^{[2
]}

Theodorou, C. ^{[1
]}

Balestra, F.

Ghibaudo, G. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, IMEP LAHC, Minatec, F-38016 Grenoble, France

[2] Univ Grenoble Alpes, CEA LETI, Minatec, F-38054 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2022年 / 192卷

基金：

欧盟地平线“2020”;

关键词：

Kubo-Greenwood; Mobility; Modeling; MOSFET; FDSOI; Cryogenic temperature; CMOS TECHNOLOGY; SCATTERING; MOBILITY;

D O I：

10.1016/j.sse.2022.108271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is performed down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only necessary to fit the capacitance and drain current transfer characteristics versus temperature for long channel devices. In contrast, in short channel transistors, the neutral scattering mobility component mu N is found to decrease at small gate length due to the increased impact of neutral defects close to source/drain ends whatever the temperature. Moreover, a closed form analytical expression for the Coulomb scattering has been developed, useful for device compact modelling.

引用

页数：7

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