Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

被引：3

作者：

Balestra, F. Serra di Santa ^{[1
]}

Contamin, L. ^{[2
]}

Casse, M. ^{[2
]}

Theodorou, C. ^{[1
]}

Balestra, F.

Ghibaudo, G. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, IMEP LAHC, Minatec, F-38016 Grenoble, France

[2] Univ Grenoble Alpes, CEA LETI, Minatec, F-38054 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2022年 / 192卷

基金：

欧盟地平线“2020”;

关键词：

Kubo-Greenwood; Mobility; Modeling; MOSFET; FDSOI; Cryogenic temperature; CMOS TECHNOLOGY; SCATTERING; MOBILITY;

D O I：

10.1016/j.sse.2022.108271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is performed down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only necessary to fit the capacitance and drain current transfer characteristics versus temperature for long channel devices. In contrast, in short channel transistors, the neutral scattering mobility component mu N is found to decrease at small gate length due to the increased impact of neutral defects close to source/drain ends whatever the temperature. Moreover, a closed form analytical expression for the Coulomb scattering has been developed, useful for device compact modelling.

引用

页数：7

共 23 条

[1]

Balestra F, 2001, Device and circuit cryogenic operation for low temperature electronics

[2] Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K [J].

Beckers, Arnout ;

Jazaeri, Farzan ;

Enz, Christian .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01) :1007-1018

[3] Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations [J].

Bonno, Olivier ;

Barraud, Sylvain ;

Mariolle, Denis ;

Andrieu, Francois .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)

[4] Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2K [J].

Casse, Mikael ;

Paz, Brune Cardoso ;

Ghibaudo, Gerard ;

Poiroux, Thierry ;

Vincent, Emmanuel ;

Galy, Philippe ;

Juge, Andre ;

Gaillard, Fred ;

de Franceschi, Silvano ;

Meunier, Tristan ;

Vinet, Maud .

APPLIED PHYSICS LETTERS, 2020, 116 (24)

[5] Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment [J].

Dura, J. ;

Triozon, F. ;

Barraud, S. ;

Munteanu, D. ;

Martinie, S. ;

Autran, J. L. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)

[6] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].

ERGINSOY, C .

PHYSICAL REVIEW, 1950, 79 (06) :1013-1014

[7] A COMPARISON OF MODELS FOR PHONON-SCATTERING IN SILICON INVERSION-LAYERS [J].

GAMIZ, F ;

LOPEZVILLANUEVA, JA .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) :4128-4129

[8] TRANSPORT IN THE INVERSION LAYER OF A MOS-TRANSISTOR - USE OF KUBO-GREENWOOD FORMALISM [J].

GHIBAUDO, G .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (05) :767-780

[9] On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature [J].

Ghibaudo, G. ;

Aouad, M. ;

Casse, M. ;

Martinie, S. ;

Poiroux, T. ;

Balestra, F. .

SOLID-STATE ELECTRONICS, 2020, 170

[10]

Ghibaudo G, 2011, ENG MATER, P307, DOI 10.1007/978-3-642-15868-1_17

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