Low temperature sintering of nano-SiC using a novel Al8B4C7 additive

被引：11

作者：

Lee, Sea-Hoon ^{[1
]}

Kim, Byung-Nam ^{[2
]}

Tanaka, Hidehiko ^{[3
]}

机构：

[1] Korea Inst Mat Sci, Chang Won 641831, Gyeongnam, South Korea

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF MATERIALS RESEARCH | 2010年 / 25卷 / 03期

关键词：

SILICON-CARBIDE; DENSIFICATION; MICROSTRUCTURE; CERAMICS;

D O I：

10.1557/JMR.2010.0057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al8B4C7 was used as a sintering additive for the densification of nano-SiC powder. The average grain size was approximately 70 nm after sintering SiC-12.5wt% A1(8)B(4)C(7) at 1550 degrees C. The densification rate strongly depended on the sintering temperature and the applied pressure. The rearrangement of SiC particles occurred at the initial shrinkage, while viscous flow and liquid phase sintering became important at the middle and final stage of densification.

引用

页码：471 / 475

页数：5

共 23 条

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