Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

被引:20
作者
Zhao, Ruiling [1 ]
Guo, Yuyao [1 ]
Lu, Liangjun [1 ,2 ]
Nisar, Muhammad Shemyal [1 ,2 ]
Chen, Jianping [1 ]
Zhou, Linjie [1 ,2 ]
机构
[1] Shanghai Jiao Tong Univ, Shanghai Inst Adv Commun & Data Sci, Dept Elect Engn, State Key Lab Adv Opt Commun Syst & Networks, Shanghai 200240, Peoples R China
[2] SJTU Pinghu Inst Intelligent Optoelect, Pinghu 314200, Peoples R China
基金
中国国家自然科学基金;
关键词
HIGH-POWER; III-V; SILICON; WAVELENGTH; PHOTONICS; MODE;
D O I
10.1364/OE.416398
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability. Two parallel reflective semiconductor optical amplifier gain channels are combined by a Y-branch in the Si3N4 photonic circuit to increase the optical gain. A Vernier ring filter is integrated in the Si3N4 photonic circuit to select a single longitudinal mode and meanwhile reduce the laser linewidth. The side-mode suppression ratio is similar to 67 dB with a pump current of 75 mA. The linewidth of the unpackaged laser is 6.6 kHz under on-chip output power of 23.5 mW. The dual-gain operation of the laser gives higher output power and narrower linewidth compared to the single gain operation. It is promising for applications in optical communications and light detection and ranging systems. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:10958 / 10966
页数:9
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