Quantum Well Infrared Photodetector for the SWIR Range

被引：2

作者：

Pereira, Pedro ^{[1
,2
]}

Guerra, Lesslie ^{[1
,2
]}

Penello, G. M. ^{[2
,3
]}

Pires, M. P. ^{[2
,3
]}

Pinto, L. D. ^{[1
,2
]}

Jakomin, R. ^{[2
,4
]}

Mourao, R. T. ^{[2
,3
]}

Degani, M. H. ^{[2
,5
]}

Maialle, M. Z. ^{[2
,5
]}

Souza, P. L. ^{[1
,2
]}

机构：

[1] Pontificia Univ Catolica Rio de Janeiro, LabSem CETUC, BR-22451900 Rio de Janeiro, Brazil

[2] Pontificia Univ Catolica Rio de Janeiro, DISSE Inst Nacl Ciencia & Tecnol Nanodisposit Sem, BR-22451900 Rio de Janeiro, Brazil

[3] Univ Fed Rio de Janeiro, Inst Fis, BR-21945970 Rio De Janeiro, Brazil

[4] Univ Fed Rio de Janeiro, Campus Xerem, BR-25245390 Duque De Caxias, RJ, Brazil

[5] Univ Estadual Campinas, Fac Ciencias Aplicadas, BR-13484350 Limeira, SP, Brazil

来源：

DEVELOPMENTS AND ADVANCES IN DEFENSE AND SECURITY | 2020年 / 152卷

基金：

巴西圣保罗研究基金会;

关键词：

QWIPs; SWIR; III-V semiconductors; HGCDTE;

D O I：

10.1007/978-981-13-9155-2_29

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

An InGaAs/InAlAs superlattice infrared photodetector is developed to reach the forbidden gap in the SWIR range for arsenides, between 1.7 and 2.5 mu m, appropriate for surveillance imaging. The figures of merit of the device are determined to be 120 K for the BLIP temperature and 2.1 mA/W and 3x10(6) Jones for the best responsivity and detectivity, respectively, obtained at 120 K under +4 V bias. Possible approaches to improve the device performance are addressed.

引用

页码：363 / 370

页数：8

共 7 条

[1] Progress in Infrared Photodetectors Since 2000 [J].