Effect of substrate temperature on indium tin oxide (ITO) thin films deposited by jet nebulizer spray pyrolysis and solar cell application

被引:48
作者
Marikkannu, S. [1 ]
Kashif, M. [2 ]
Sethupathy, N. [3 ]
Vidhya, V. S. [4 ]
Piraman, Shakkthivel [5 ]
Ayeshamariam, A. [6 ]
Bououdina, M. [7 ,8 ]
Ahmed, Naser M. [9 ]
Jayachandran, M. [10 ]
机构
[1] Arumugam Pillai Seethai Ammal Coll, Dept Phys, Tiruppattur 630211, India
[2] Univ Malaysia Perlis, INEE, Nano Biochip Res Grp, Kangar 01000, Perlis, Malaysia
[3] Arignar Anna Govt Arts Coll, Dept Phys, Namakkal 637002, India
[4] Chendhuran Coll Engn & Technol, Dept Chem, Pudukottai 622507, India
[5] Alagappa Univ, Dept Nanosci & Technol, Sustainable Energy & Smart Mat Res Lab, Karaikkudi 630002, Tamil Nadu, India
[6] Khadir Mohideen Coll, Adirampattinam 614701, India
[7] Univ Bahrain, Nanotechnol Ctr, Zallaq, Bahrain
[8] Univ Bahrain, Dept Phys, Zallaq, Bahrain
[9] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia
[10] Cent Electrochem Res Inst, CSIR, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
关键词
Jet spray pyrolysis; ITO; Optical properties; Current-voltage characteristics; Heterojunction solar cell; OPTOELECTRONIC PROPERTIES; ELECTRICAL-PROPERTIES; IN2O3; MECHANISM; GLASS;
D O I
10.1016/j.mssp.2014.07.036
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study focused on the effect of substrate temperature (350 degrees C, 400 degrees C, and 450 degrees C) on morphological, optical, and electrical properties of indium tin oxide (ITO) films deposited onto porous silicon/sodalime glass substrates through jet nebulizer spray pyrolysis for use in heterojunction solar cells. X-ray diffraction analysis confirmed the formation of pure and single-phase In2O3 for all the deposited films whose crystallinity was enhanced with increasing substrate temperature, as shown by the increasing (222) peak intensity. Morphological observations were conducted using scanning electron microscopy to reveal the formation of continuous dense films composed of nanograins. The UV-vis spectra revealed that the transmittance increased with increasing substrate temperature, reaching a value of over 80% at 450 degrees C. The photoelectric performance of the solar cell was studied using the I-V curve by illuminating the cell at 100 mW/cm(2). A high efficiency (eta) of 3.325% with I-SC and V-OC values of 14.8 mA/cm(2) and 0.60 V, respectively, was attained by the ITO solar cell annealed at 450 degrees C. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:562 / 568
页数:7
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