The critical charge density in high voltage 4H-SiC thyristors

被引：11
|
作者：
Levinshtein, ME
Ivanov, PA
Mnatsakanov, TT
Yurkov, SN
Agarwal, AK
Palmour, JW
机构：
[1] Russian Acad Sci, Ioff Inst, St Petersburg 194021, Russia
[2] All Russia Electrotech Inst, Moscow 111250, Russia
[3] CREE Inc, Durham, NC 27703 USA
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 04期
关键词：
silicon carbide; thyristor; switch-on; critical charge;
D O I：
10.1016/S0038-1101(02)00325-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The critical charge density in 2.6 kV 4H-SiC thyristors, n(cr), has been investigated in the temperature range from 300 to 500 K using gate-controlled switching and pulsed optical triggering. The n(cr) values furnished by these different techniques are in reasonable agreement. The nc, decreases monotonically from n(cr) similar to 10(16) cm(-3) at T = 300 K to n(cr) similar to 10(14) cm(-3) at T = 500 K. At room temperature, the n(cr) value found in this study for high-voltage SiC thyristors is an order of magnitude larger than that in low-voltage SiC thyristors with breakover voltage of 400 V, and is of the same order as that in the high-voltage power Si thyristors. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：699 / 704
页数：6
相关论文
共 50 条
  • [21] 100 A and 3.1 kV 4H-SiC GTO Thyristors
    Van Campen, S
    Ezis, A
    Zingaro, J
    Storaska, G
    Clarke, RC
    Elliott, K
    Grumman, N
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 58 - 64
  • [22] High-Yield 4H-SiC Thyristors for Wafer-scale Interconnection
    Nechay, B.
    Snook, M.
    Hearne, H.
    McNutt, T.
    Veliadis, V.
    Woodruff, S.
    Howell, R. S.
    Giorgi, D.
    White, J.
    Davis, S.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1171 - +
  • [23] Design and fabrications of high voltage IGBTs on 4H-SiC
    Zhang, Qingchun
    Jonas, Charlotte
    Ryu, Sei-Hyung
    Agarwal, Anant
    Palmour, John
    PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 285 - +
  • [24] 4H-SiC BJT characterization at high current high voltage
    Gao, Yan
    Huang, Alex Q.
    Xu, Xiaojun
    Du, Zhong
    Agarwal, Anant K.
    Krishnaswami, Sumi
    Ryu, Sei-Hyung
    2006 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-7, 2006, : 2932 - +
  • [25] High temperature capability of high voltage 4H-SiC JBS
    Berthou, M.
    Godignon, P.
    Vergne, Bertrand
    Brosselard, Pierre
    HETEROSIC & WASMPE 2011, 2012, 711 : 124 - +
  • [26] Reliability of high voltage 4H-SiC MOSFET devices
    Krishnaswami, Sumi
    Ryu, Sei-Hyung
    Heath, Bradley
    Agarwal, Anant
    Palmour, John
    Lelis, Aivars
    Scozzie, Charles
    Scofield, James
    SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 401 - +
  • [27] High Performance, Ultra High Voltage 4H-SiC IGBTs
    Ryu, Sei-Hyung
    Capell, Craig
    Cheng, Lin
    Jonas, Charlotte
    Gupta, Anand
    Donofrio, Matt
    Clayton, Jack
    O'Loughlin, Michael
    Burk, Al
    Grider, David
    Agarwal, Anant
    Palmour, John
    Hefner, Allen
    Bhattacharya, Subhashish
    2012 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2012, : 3603 - 3608
  • [28] High voltage Ni/4H-SiC Schottky rectifiers
    Chilukuri, Ravi K.
    Baliga, B.Jayant
    IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 1999, : 161 - 164
  • [29] A simulation study of high voltage 4H-SiC IGBTs
    Wang, J
    Williams, BW
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (07) : 806 - 815
  • [30] Temperature dependence of turn-on processes in 4H-SiC thyristors
    Levinshtein, ME
    Mnatsakanov, TT
    Ivanov, PA
    Agarwal, AK
    Palmour, JW
    Rumyantsev, SL
    Tandoev, AG
    Yurkov, SN
    SOLID-STATE ELECTRONICS, 2001, 45 (03) : 453 - 459
12345