High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes

被引：4
|
作者：
Shenoy, PM [1 ]
Baliga, BJ [1 ]
机构：
[1] N Carolina State Univ, Power Semicond Res Ctr, Raleigh, NC 27695 USA
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 12期
关键词：
polysilicon; semiconductor diodes; silicon carbide;
D O I：
10.1049/el:19970678
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel P+ polysilicon/N(-)6H-SiC heterojunction diode is reported which combines the advantages of both Schottky barrier diodes and pn junction diodes. The unterminated heterojunction diodes have excellent rectification characteristics and a high breakdown voltage of 220V. The forward voltage drop measured at 100A/cm(2) is 2.7V, close to the calculated value of 2.4V. The suitability of this device for high speed switching applications was experimentally confirmed using reverse recovery measurements.
引用
收藏
页码：1086 / 1087
页数：2
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