Room-temperature ferromagnetic nanotubes controlled by electron or hole doping

被引:211
作者
Krusin-Elbaum, L [1 ]
Newns, DM [1 ]
Zeng, H [1 ]
Derycke, V [1 ]
Sun, JZ [1 ]
Sandstrom, R [1 ]
机构
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1038/nature02970
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Nanotubes and nanowires with both elemental(,)(1)(2) (carbon or silicon) and multi-element(3-5) compositions (such as compound semiconductors or oxides), and exhibiting electronic properties ranging from metallic to semiconducting, are being extensively investigated for use in device structures designed to control electron charge(6-8). However, another important degree of freedom-electron spin, the control of which underlies the operation of 'spintronic' devices(9)-has been much less explored. This is probably due to the relative paucity of nanometre-scale ferromagnetic building blocks(10) (in which electron spins are naturally aligned) from which spin-polarized electrons can be injected. Here we describe nanotubes of vanadium oxide (VOx), formed by controllable self-assembly(11), that are ferromagnetic at room temperature. The as-formed nanotubes are transformed from spin-frustrated semiconductors to ferromagnets by doping with either electrons or holes, potentially offering a route to spin control(12) in nanotube-based heterostructures(13).
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收藏
页码:672 / 676
页数:5
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