Improved efficiency positive and negative luminescent light emitting devices for mid-infrared gas sensing applications

被引：4

作者：

Pullin, M ^{[1
]}

Li, XB ^{[1
]}

Heber, J ^{[1
]}

Gevaux, D ^{[1
]}

Phillips, C ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Solid State Grp, London SW7 2BW, England

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV | 2000年 / 3938卷

关键词：

mid-IR; LED; In(As; Sb); negative luminescence;

D O I：

10.1117/12.382825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs / InAsSb SQW LED's incorporating AlAs0.02Sb0.98 or In0.83Al0.17As electron confining barrier layers are reported. Devices emitting 108 mu W and 84 mu W at 300 K with QW emission at lambda = 4.1 trm and lambda = 4.7 mu m exhibit quantum efficiencies that are improved by factors of 7 and 3.4 respectively over control samples without the barrier. The operating wavelength of negative luminescent (NL) devices with InAs / In(As,Sb) strained-layer-superlattice (SLS) active regions has been extended to lambda = 6.8 mu m. NL performance is limited by leakage currents that originate in the n+ contact layer.

引用

页码：144 / 153

页数：10

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