Characterization of Neutron Transmutation Doped (NTD) Ge for low temperature sensor development

被引：2
|
作者：
Mathimalar, S. [1 ,2 ]
Singh, V. [1 ,2 ]
Dokania, N. [1 ,2 ]
Nanal, V. [3 ]
Pillay, R. G. [3 ]
Pal, S. [3 ]
Ramakrishnan, S. [4 ]
Shrivastava, A. [5 ]
Maheshwari, Priya [6 ]
Pujari, P. K. [6 ]
Ojha, S. [7 ]
Kanjilal, D. [7 ]
Jagadeesan, K. C. [8 ]
Thakare, S. V. [8 ]
机构：
[1] Tata Inst Fundamental Res, India Based Neutrino Observ, Bombay 400005, Maharashtra, India
[2] Homi Bhabha Natl Inst, Bombay 400094, Maharashtra, India
[3] Tata Inst Fundamental Res, Dept Nucl & Atom Phys, Bombay 400005, Maharashtra, India
[4] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India
[5] Bhabha Atom Res Ctr, Div Nucl Phys, Bombay 400085, Maharashtra, India
[6] Bhabha Atom Res Ctr, Div Radiochem, Bombay 400085, Maharashtra, India
[7] Inter Univ Accelerator Ctr, New Delhi 110067, India
[8] Bhabha Atom Res Ctr, Isotope Prod & Applicat Div, Mumbai 400085, Maharashtra, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2015年 / 345卷
关键词：
NTD Ge; PALS; Channeling; HOPPING CONDUCTION; GERMANIUM;
D O I：
10.1016/j.nimb.2014.12.020
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Development of NTD Ge sensors has been initiated for low temperature (mK) thermometry in The India-based TIN detector (TIN.TIN). NTD Ge sensors are prepared by thermal neutron irradiation of device grade Ge samples at Dhruva reactor, BARC, Mumbai. Detailed measurements have been carried out in irradiated samples for estimating the carrier concentration and fast neutron induced defects. The Positron Annihilation Lifetime Spectroscopy (PALS) measurements indicated monovacancy type defects for all irradiated samples, while Channeling studies employing RBS with 2 MeV alpha particles, revealed no significant defects in the samples exposed to fast neutron fluence of similar to 4 x 10(16)/cm(2). Both PALS and Channeling studies have shown that vacuum annealing at 600 degrees C for similar to 2 h is sufficient to recover the damage in the irradiated samples, thereby making them suitable for the sensor development. (C) 2014 Elsevier B.V. All rights reserved.
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收藏
页码：33 / 36
页数：4
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