Performance Improvement of Nanoscale Field Effect Diode (FED) with Modified Charge Channel: 2D Simulation and an Analytical Surface Potential Model

The off-state currents of Side contacted Field Effect Diode (S-FED) and Double-Gate Field Effect Diode (DG-FED) structures increase for the lengths of the channel shorter than 35 nm. This is owing to the minority carrier's injection from the source and drain into the channel and the band to band tunneling phenomenon caused by the high impurities of the drain, source, and reservoirs. In this paper, a structure with a 25 nm channel length with low doping and without reservoirs has been presented. The charge channel of the proposed structure modified using Multi Gate and Extended source/drain electrode. We have called the structure as modified charge channel FED (MCC-FED). The main idea in the proposed device is to modify the charge channel for improving the electrical performance. This device achieved lower gate delay time and energy-delay production and a higher on-current and on/off current ratio compared to conventional FEDs. In addition, two-dimensional analytical models for the surface potential and the electric field at the channel surface are presented by solving the two-dimensional Poisson equation in three distinct zones in the channel with appropriate boundary conditions. To verify the validity of the proposed model, the modeling results are compared with the simulation results and appropriate matching between results demonstrates appropriate accuracy of the proposed model.