A 0.35μm SiGeBiCMOS process featuring a 80 GHz fmax HBT and integrated high-Q.RF passive components

被引：30

作者：

Decoutere, S ^{[1
]}

Vleugels, F ^{[1
]}

Kuhn, R ^{[1
]}

Loo, R ^{[1
]}

Caymax, M ^{[1
]}

Jenei, S ^{[1
]}

Croon, J ^{[1
]}

Van Huylenbroeck, S ^{[1
]}

Da Rold, M ^{[1
]}

Rosseel, E ^{[1
]}

Chevalier, P ^{[1
]}

Coppens, P ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2000年

关键词：

D O I：

10.1109/BIPOL.2000.886184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SiGe HBT, fabricated by means of selective epitaxy, and high-Q RF passive components have been integrated into a 0.35 mum BICMOS process. The HBT features an FT Of 50GHz and F-MAX of 80GHz at V-BC=2V. The npn transistors are integrated in a 0.35 mum CMOS process with poly resistors, MIM capacitors and thick metal 4 on chip spiral inductors.

引用

页码：106 / 109

页数：4

共 10 条

[1] SiGe HBT Technology Based on a 0.13-μm Process Featuring an fMAX of 325 GHz
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[3] An industrial 0.35 μm SiGeBiCMOS technology for 5 GHz WLAN featuring an improved selective epitaxial growth process
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[7] QUBiC3:: A 0.5μm BiCMOS production technology, with fT=30GHz, fmax=60GHz and high-quality passive components for wireless telecommunication applications
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