Characterization of void in bonded silicon-on-insulator wafers by controlling coherence length of light source using near-infrared microscope

被引：3

作者：

Ajari, Noritaka ^{[1
]}

Uchikoshi, Junichi ^{[1
]}

Hirokane, Takaaki ^{[1
]}

Arima, Kenta ^{[1
]}

Morita, Mizuho ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Precis Sci & Technol, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

near-infrared microscope; silicon on insulator; coherence length; interference fringe; void; silicon direct bonding;

D O I：

10.1143/JJAP.46.1994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A void in bonded silicon-on-insulator wafers before thinning has been characterized using a near-IR microscope with an interference filter for controlling the coherence length of the light source. The visibility of interference fringes is improved by controlling the coherence length of the light. The cause of the void formation is discussed by comparing the void shape obtained from an observation image with deflection curve models of discs under a uniformly distributed load of gas molecules or under a concentrated load of a particle. It is suggested that the void is formed by gas molecules trapped in the bonded interface.

引用

页码：1994 / 1996

页数：3

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