DFT Calculations of Structure and Properties of Asymmetric Clusters (HClInN3)n (n=1-6)

被引:1
作者
Chen, Zhidu [1 ]
Ma, Dengxue [2 ]
Liu, Guokui [2 ]
Xia, Qiying [2 ]
机构
[1] Linyi Univ, Yishui Campus, Yishui 276400, Peoples R China
[2] Linyi Univ, Sch Chem & Chem Engn, Linyi 276005, Peoples R China
基金
中国国家自然科学基金;
关键词
asymmetric clusters (HClInN3)(n) (n=1-6); single source precursors; density functional theory (DFT); structures; stabilities; IR spectra; CHEMICAL-VAPOR-DEPOSITION; EFFECTIVE CORE POTENTIALS; MOLECULAR CALCULATIONS; NATIVE DEFECTS; GAN; PRECURSORS; AZIDES; AZIDOGALLANES; SPECTRA; BR2INN3;
D O I
10.1134/S0036024418080344
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In order to find single-source precursors of InN material, the structures and properties of small asymmetric clusters (HClInN3)(n) (n = 1-6) are studied by means of the density functional theory. The frameworks of clusters (HClInN3)(n) (n = 2-6) prefer to be 2n-membered ring with alternating indium and alpha-nitrogen atoms. The uncorrected binding energies (E-b), corrected binding energies (Eb-c) and average corrected binding energies (Eb-c-ave) all reveal that all of asymmetric clusters (HClInN3)(n) (n = 1-6) can continue to gain energy upon increasing the cluster size n. The relationship between HOMO-LUMO energy gap (E-gap) and cluster size n is discussed. Thermodynamic properties are linearly correlated with the cluster size n as well as with the temperature. According to the calculated Gibbs free energies, the formation of the clusters (HClInN3)(n) (n = 2-6) from the monomer is thermodynamically favorable below 700 K.
引用
收藏
页码:1542 / 1549
页数:8
相关论文
共 36 条
[11]  
HAY PJ, 1985, J CHEM PHYS, V82, P270, DOI 10.1063/1.448799
[12]  
HAY PJ, 1985, J CHEM PHYS, V82, P299, DOI [10.1063/1.448975, 10.1063/1.448800, 10.1063/1.448799]
[13]   MOVPE OF ALN AND GAN BY USING NOVEL PRECURSORS [J].
HO, KL ;
JENSEN, KF ;
HWANG, JW ;
GLADFELTER, WL ;
EVANS, JF .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :376-380
[14]  
KHAN MA, 1991, APPL PHYS LETT, V58, P526, DOI 10.1063/1.104575
[15]  
Kouvetakis J, 2001, MAIN GROUP MET CHEM, V24, P77
[16]   Synthesis and structures of heterocycle azidogallanes [(CH3)ClGaN3]4 and [(CH3)BrGaN3]3 en route to [(CH3)HGaN3]x:: An inorganic precursor to GaN [J].
Kouvetakis, J ;
McMurran, J ;
Steffek, C ;
Groy, TL ;
Hubbard, JL .
INORGANIC CHEMISTRY, 2000, 39 (17) :3805-3809
[17]   DEVELOPMENT OF THE COLLE-SALVETTI CORRELATION-ENERGY FORMULA INTO A FUNCTIONAL OF THE ELECTRON-DENSITY [J].
LEE, CT ;
YANG, WT ;
PARR, RG .
PHYSICAL REVIEW B, 1988, 37 (02) :785-789
[18]   INFARED ABSORPTION SPECTRA OF COMPOUNDS OF HIGH NITROGEN CONTENT [J].
LIEBER, E ;
LEVERING, DR ;
PATTERSON, LJ .
ANALYTICAL CHEMISTRY, 1951, 23 (11) :1594-1604
[19]   H2GaN3 and derivatives:: A facile method to gallium nitride [J].
McMurran, J ;
Dai, D ;
Balasubramanian, K ;
Steffek, C ;
Kouvetakis, J ;
Hubbard, JL .
INORGANIC CHEMISTRY, 1998, 37 (26) :6638-6644
[20]   Development of a low-temperature GaN chemical vapor deposition process based on a single molecular source H2GaN3 [J].
McMurran, J ;
Kouvetakis, J ;
Smith, DJ .
APPLIED PHYSICS LETTERS, 1999, 74 (06) :883-885