Determination of the strain dependence of resistance in La0.7Sr0.3MnO3/PMN-PT using the converse piezoelectric effect

被引：68
作者：
Zheng, R. K. [1 ]
Wang, Y.
Chan, H. L. W.
Choy, C. L.
Luo, H. S.
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 201800, Peoples R China
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 21期
关键词：
D O I：
10.1103/PhysRevB.75.212102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have deposited La0.7Sr0.3MnO3 (LSMO) thin films on piezoelectric (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (x similar to 0.3) (PMN-PT) single-crystal substrates and studied the effects of substrate-induced lattice strain on the resistance of the LSMO films. By applying electric fields across the PMN-PT substrate, we in situ induce an in-plane compressive (tensile) strain in the PMN-PT substrate via the converse piezoelectric effect. The induced strain is transferred to the LSMO film, which then imposes an in-plane compressive (tensile) strain on the LSMO film, thereby causing a linear decrease (increase) in the resistance of the LSMO film. Based on the experimental results, we establish quantitative relationships between the resistance of the LSMO film and the converse piezoelectric-effect-induced out-of-plane and in-plane strains in the PMN-PT substrate and LSMO film, respectively.
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页数：4
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