Inductively coupled plasma etching of ZnO

被引：1
作者：
Nordheden, Karen J. [1 ]
Dineen, Mark [2 ]
Welch, Colin
机构：
[1] Univ Kansas, Chem & Petrol Engn, Lawrence, KS 66045 USA
[2] Oxford Instruments Plasma Technol, Bristol BS49 4AP, Avon, England
来源：
ZINC OXIDE MATERIALS AND DEVICES II | 2007年 / 6474卷
关键词：
ZnO; dry etching; inductively coupled plasma; wide bandgap;
D O I：
10.1117/12.714048
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The etching characteristics of ZnO epitaxial layers in Oxford Plasmalab 100 ICP 180 and 380 systems are investigated. Etch rates are studied as a function of gas composition, ICP power and RF bias power. Surface profilometry and scanning electron microscopy are used to characterize etch rates and surface morphologies. Highlights from other recently published results are also discussed.
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页数：4
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共 14 条
  • [1] High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas
    Bae, JW
    Jeong, CH
    Kim, HK
    Kim, KK
    Cho, NG
    Seong, TY
    Park, SJ
    Adesida, I
    Yeom, GY
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (5B): : L535 - L537
  • [2] Florio J.J., 2004, CRC Handbook of chemistry and physics: a readyreference book of chemical and physical data
  • [3] Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO
    Ip, K
    Baik, KH
    Overberg, ME
    Lambers, ES
    Heo, YW
    Norton, DP
    Pearton, SJ
    Ren, F
    Zavada, JM
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3546 - 3548
  • [4] ICP dry etching of ZnO and effects of hydrogen
    Ip, K
    Overberg, ME
    Baik, KW
    Wilson, RG
    Kucheyev, SO
    Williams, JS
    Jagadish, C
    Ren, F
    Heo, YW
    Norton, DP
    Zavada, JM
    Pearton, SJ
    [J]. SOLID-STATE ELECTRONICS, 2003, 47 (12) : 2289 - 2294
  • [5] Inductively coupled plasma reactive ion etching of ZnO using BCI3-based plasmas
    Kim, HK
    Bae, JW
    Kim, TK
    Kim, KK
    Seong, TY
    Adesida, I
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1273 - 1277
  • [6] Inductively coupled plasma reactive ion etching of ZnO using C2F6 and NF3-based gas mixtures
    Lee, Gun-Kyo
    Moon, Jong-Ha
    Lee, Byung-Teak
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (07) : 971 - 974
  • [7] Dry etching of ZnO using an inductively coupled plasma
    Lee, JM
    Chang, KM
    Kim, KK
    Choi, WK
    Park, SJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (01) : G1 - G3
  • [8] Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO
    Lim, Wantae
    Voss, Lars
    Khanna, Rohit
    Gila, B. P.
    Norton, D. P.
    Pearton, S. J.
    Ren, F.
    [J]. APPLIED SURFACE SCIENCE, 2006, 253 (03) : 1269 - 1273
  • [9] Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO
    Lim, WT
    Baek, IK
    Lee, JW
    Lee, ES
    Jeon, MH
    Cho, GS
    Heo, YW
    Norton, DP
    Pearton, SJ
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3105 - 3107
  • [10] Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas
    Na, SW
    Shin, MH
    Chung, YM
    Han, JG
    Jeung, SH
    Boo, JH
    Lee, NE
    [J]. MICROELECTRONIC ENGINEERING, 2006, 83 (02) : 328 - 335
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