A power-efficient 600-mVpp voltage-mode driver with independently matched pull-up and pull-down impedances

被引:6
作者
Bae, Woorham [1 ]
Jeong, Deog-Kyoon [1 ]
机构
[1] Seoul Natl Univ, Inter Univ Semicond Res Ctr, Dept Elect & Comp Engn, Seoul, South Korea
关键词
driver; voltage mode; impedance matching; regulator; background calibration; CMOS; TRANSMITTER;
D O I
10.1002/cta.2050
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, a large-swing, low-power voltage-mode driver with independently matched pull-up and pull-down impedances is proposed. To achieve large swing and constant impedances during a transition, a Pover-N structure is implemented with regulators calibrating the impedances. Two regulators are dedicated to matching the pull-up and pull-down impedances by regulating the supply voltages of the driver and predriver, respectively. Because background impedance calibration loops are adopted to track the process, voltage, and temperature (PVT) variations, the proposed driver can operate properly without additional calibration time. To reduce the power consumption of the calibration loops, scaled replicas of the actual driver are used. Moreover, an analysis of design optimization for the proposed driver is presented. The proposed driver was fabricated in 65-nm CMOS technology and verified at a 5-Gb/s data rate. Measurement results show that the proposed driver has a voltage swing of 600 mV(pp) and a horizontal eye opening of 0.5 UI. The prototype chip consumes 6mW at a 1.0-V supply. Copyright (C) 2014 John Wiley & Sons, Ltd.
引用
收藏
页码:2057 / 2071
页数:15
相关论文
共 23 条
[1]   A 2-Gbaud 0.7-V swing voltage-mode driver and on-chip terminator for high-speed NRZ data transmission [J].
Ahn, G ;
Jeong, DK ;
Kim, G .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (06) :915-918
[2]   Modelling and design considerations on CML gates under high-current effects [J].
Alioto, M ;
Palumbo, G .
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2005, 33 (06) :503-518
[3]  
Bae W, 2012, INT SOC DESIGN CONF, P49, DOI 10.1109/ISOCC.2012.6406922
[4]   A scalable 5-15 Gbps, 14-75 mW low-power I/O (transceiver in 65 nm CMOS [J].
Balamurugan, Ganesh ;
Kennedy, Joseph ;
Banerjee, Gaurab ;
Jaussi, James E. ;
Mansuri, Mozhgan ;
O'Mahony, Frank ;
Casper, Bryan ;
Mooney, Randy .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (04) :1010-1019
[5]   A CMOS 10-Gb/s power-efficient 4-PAM transmitter [J].
Farzan, K ;
Johns, DA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (03) :529-532
[6]  
Fukuda Koji, 2010, 2010 IEEE International Solid-State Circuits Conference (ISSCC), P368, DOI 10.1109/ISSCC.2010.5433824
[7]  
Garboczi E.J., 2012, COMSOL C BOSTON 2012, P1
[8]  
Green MM, 2003, PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL II, P204
[9]  
Hajimiri A, 2011, IEEE J SOLID-ST CIRC, V41, P621
[10]  
Hodges D.A., 2004, Analysis and Design of Digital Integrated Circuits