Exciton mass increase in a GaAs/AlGaAs quantum well in a transverse magnetic field

被引：9

作者：

Bodnar, S. Yu. ^{[1
]}

Grigoryev, P. S. ^{[2
]}

Loginov, D. K. ^{[2
]}

Davydov, V. G. ^{[3
]}

Efimov, Yu. P. ^{[3
]}

Eliseev, S. A. ^{[3
]}

Lovtcius, V. A. ^{[3
]}

Ubyivovk, E. V. ^{[3
,4
]}

Mikhailovskii, V. Yu. ^{[3
]}

Ignatiev, I. V. ^{[2
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Phys, Staudinger Weg 7, D-55128 Mainz, Germany

[2] St Petersburg State Univ, Spin Opt Lab, St Petersburg 198504, Russia

[3] St Petersburg State Univ, 1 Ulianovskaya Str, St Petersburg 198504, Russia

[4] ITMO Univ, 49 Kronverksky Pr, St Petersburg 197101, Russia

来源：

PHYSICAL REVIEW B | 2017年 / 95卷 / 19期

基金：

俄罗斯基础研究基金会;

关键词：

ABSORPTION EDGE; SEMICONDUCTORS; SPECTROSCOPY; POLARITONS;

D O I：

10.1103/PhysRevB.95.195311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we have investigated the exciton reflectance spectra of a high quality heterostructure with a GaAs/AlGaAs quantum well in a transverse magnetic field (Voigt geometry). It has been shown that application of the magnetic field leads to a decrease of energy distance between spectral features related to the excitonlike polariton modes. This effect has been treated as the magneto-induced increase of the exciton mass. We have shown that the hydrogenlike and diamagnetic exciton models are insufficient to describe the exciton behavior in the intermediate magnetic fields studied. Considering the symmetry of the problem, we have developed a phenomenological model which adequately describes the experimental data.

引用

页数：8

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