GaAs photonic crystal slab nanocavities: Growth, fabrication, and quality factor

被引：14

作者：

Sweet, J. ^{[1
]}

Richards, B. C. ^{[1
]}

Olitzky, J. D. ^{[1
]}

Hendrickson, J. ^{[1
]}

Khitrova, G. ^{[1
]}

Gibbs, H. M. ^{[1
]}

Litvinov, D. ^{[2
]}

Gerthsen, D. ^{[2
]}

Hu, D. Z. ^{[3
,4
]}

Schaadt, D. M. ^{[3
,4
]}

Wegener, M. ^{[3
,4
]}

Khankhoje, U. ^{[5
]}

Scherer, A. ^{[5
]}

机构：

[1] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

[2] Univ Karlsruhe TH, Lab Elekt Mikroskopie, D-76131 Karlsruhe, Germany

[3] Univ Karlsruhe TH, Inst Angew Phys, Karlsruhe, Germany

[4] Univ Karlsruhe TH, DFG Ctr Funct Nanostruct CFN, D-76131 Karlsruhe, Germany

[5] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

来源：

PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS | 2010年 / 8卷 / 01期

基金：

美国国家科学基金会;

关键词：

Nanostructure fabrication; Microcavities; Photonic crystals; Integrated optics devices; Photonic integrated circuits; SINGLE QUANTUM-DOT; CAVITY; SYSTEM;

D O I：

10.1016/j.photonics.2009.10.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In an effort to understand why short wavelength (similar to 1000 nm) GaAs-based photonic crystal slab nanocavities have much lower quality factors (Q) than predicted (and observed in Si), many samples were grown, fabricated into nanocavities, and studied by atomic force, transmission electron, and scanning electron microscopy as well as optical spectroscopy. The top surface of the AlGaAs sacrificial layer can be rough even when the top of the slab is smooth; growth conditions are reported that reduce the AlGaAs roughness by an order of magnitude, but this had little effect on Q. The removal of the sacrificial layer by hydrogen fluoride can leave behind a residue; potassium hydroxide completely removes the residue, resulting in higher Qs. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1 / 6

页数：6

共 13 条

[1] High-Q photonic nanocavity in a two-dimensional photonic crystal [J].