A Highly Reliable FRAM (Ferroelectric Random Access Memory)

被引：2

作者：

Kim, J. -H. ^{[1
]}

Jung, D. J. ^{[1
]}

Kang, Y. M. ^{[1
]}

Kim, H. H. ^{[1
]}

Jung, W. W. ^{[1
]}

Kang, J. Y. ^{[1
]}

Lee, E. S. ^{[1
]}

Kim, H. ^{[1
]}

Jung, J. Y. ^{[1
]}

Kang, S. K. ^{[1
]}

Hong, Y. K. ^{[1
]}

Kim, S. Y. ^{[1
]}

Koh, H. K. ^{[1
]}

Choi, D. Y. ^{[1
]}

Park, J. H. ^{[1
]}

Lee, S. Y. ^{[1
]}

Jeong, H. S. ^{[1
]}

Kim, K. ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Technol Dev Team 2, Semicond R&D Ctr, Memory Div, San 24, Yongin 449900, South Korea

来源：

2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年

关键词：

D O I：

10.1109/RELPHY.2007.369950

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

64 Mb FRAM with 1T1C (one-transistor and one-capacitor) cell architecture has progressed greatly for a robust level of reliability. Random-single-bits appeared from package-level tests are attributed mostly to extrinsic origins (e.g. interconnection failures) rather than intrinsic ones. The extrinsic failures can be linked to two activation energies: while one is 0.27 eV originated from oxygen-vacancy movements at the top interface and grain boundary in the ferroelectric films, the other is 0.86 eV caused by imperfection in either the top-electrode contact (TEC), or the bottom-electrode contact (BEC), or both, of the cell capacitor. As a result of applying novel schemes to remove the analyzed defectives, we have the FRAM with no bit failure up to 1000 hours over both high-temperature-operating-life (HTOL) and high-temperature-storage (HTS) tests.

引用

页码：554 / +

页数：2

共 22 条

[1] Point defect chemistry of metal oxide heterostructures
Aggarwal, S
Ramesh, R
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 : 463 - 499
[2] Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes
Colla, EL
Taylor, DV
Tagantsev, AK
Setter, N
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2478 - 2480
[3] Fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin films
Du, XF
Chen, IW
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) : 7789 - 7798
[4] FATIGUE AND SWITCHING IN FERROELECTRIC MEMORIES - THEORY AND EXPERIMENT
DUIKER, HM
BEALE, PD
SCOTT, JF
DEARAUJO, CAP
MELNICK, BM
CUCHIARO, JD
MCMILLAN, LD
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5783 - 5791
[5] Hayashi T, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P543, DOI 10.1109/IEDM.2002.1175899
[6] Mass-productive high performance 0.5μm embedded FRAM technology with triple layer metal
Itoh, A
Hikosaka, Y
Saito, T
Naganuma, H
Miyazawa, H
Ozaki, Y
Kato, Y
Mihara, S
Iwamoto, H
Mochizuki, S
Nakamura, M
Yamazaki, T
[J]. 2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, : 32 - 33
[7] Joo HJ, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P148
[8] Effect of microgeometry on switching and transport in lead zirconate titanate capacitors: Implications for etching of nano-ferroelectrics
Jung, DJ
Morrison, FD
Dawber, M
Kim, HH
Kim, K
Scott, JF
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) : 4968 - 4975
[9] JUNG JY, 2006, SSDM, P126
[10] KANG YM, 2006, S VLSI, P152

← 1 2 3 →