Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1-xGex alloy layers

被引：13

作者：

Dowsett, MG ^{[1
]}

Morris, R

Chou, PF

Corcoran, SF

Kheyrandish, H

Cooke, GA

Maul, JL

Patel, SB

机构：

[1] Univ Warwick, Dept Phys, Adv SIMS Project, Coventry CV4 7AL, W Midlands, England

[2] TSMC, Hsinchu, Taiwan

[3] Intel Corp, Hillsboro, OR 97124 USA

[4] MATS UK Ltd, Warrington, Cheshire, England

[5] FEI Munich GmbH, Munich, Germany

来源：

APPLIED SURFACE SCIENCE | 2003年 / 203卷

关键词：

charge compensation; SiGe; ultra shallow SIMS profiling;

D O I：

10.1016/S0169-4332(02)00765-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper we demonstrate the use of red laser illumination to stimulate charge carriers in semiconductor layers with very low residual carrier densities, to eliminate surface potential changes during SIMS depth profiling. We show that very simple quantification protocols can be used for Ge assay, at least up to Ge fractions of 30%. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：500 / 503

页数：4